NX3008CBKS. Аналоги и основные параметры

Наименование производителя: NX3008CBKS

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.35 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TSSOP6

Аналог (замена) для NX3008CBKS

- подборⓘ MOSFET транзистора по параметрам

 

NX3008CBKS даташит

 ..1. Size:2329K  nxp
nx3008cbks.pdfpdf_icon

NX3008CBKS

NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD

 5.1. Size:2309K  nxp
nx3008cbkv.pdfpdf_icon

NX3008CBKS

NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltag

 8.1. Size:1602K  nxp
nx3008nbk.pdfpdf_icon

NX3008CBKS

NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 8.2. Size:1607K  nxp
nx3008pbkv.pdfpdf_icon

NX3008CBKS

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

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