NX3008NBKW MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX3008NBKW

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: SC70

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NX3008NBKW datasheet

 ..1. Size:1598K  nxp
 nx3008nbkw.pdf pdf_icon

NX3008NBKW

NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.1. Size:1602K  nxp
 nx3008nbk.pdf pdf_icon

NX3008NBKW

NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1606K  nxp
 nx3008nbkv.pdf pdf_icon

NX3008NBKW

NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

 5.3. Size:1618K  nxp
 nx3008nbks.pdf pdf_icon

NX3008NBKW

NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2

MOSTRAR MÁS

Otros transistores... BUK9Y58-75B, NX2301P, NX3008CBKS, NX3008CBKV, NX3008NBK, NX3008NBKS, NX3008NBKT, NX3008NBKV, 2SK3878, NX3008PBK, NX3008PBKS, NX3008PBKT, NX3008PBKV, NX3008PBKW, PH2520U, PH2925U, PH3120L