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NX3008NBKW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX3008NBKW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: SC70
 

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NX3008NBKW Datasheet (PDF)

 ..1. Size:1598K  nxp
 nx3008nbkw.pdf pdf_icon

NX3008NBKW

NX3008NBKW30 V, 350 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.1. Size:1602K  nxp
 nx3008nbk.pdf pdf_icon

NX3008NBKW

NX3008NBK30 V, 400 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1606K  nxp
 nx3008nbkv.pdf pdf_icon

NX3008NBKW

NX3008NBKV30 V, 400 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

 5.3. Size:1618K  nxp
 nx3008nbks.pdf pdf_icon

NX3008NBKW

NX3008NBKS30 V, 350 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2

MOSTRAR MÁS

Otros transistores... BUK9Y58-75B , NX2301P , NX3008CBKS , NX3008CBKV , NX3008NBK , NX3008NBKS , NX3008NBKT , NX3008NBKV , IRFP260 , NX3008PBK , NX3008PBKS , NX3008PBKT , NX3008PBKV , NX3008PBKW , PH2520U , PH2925U , PH3120L .

History: SISA18DN | IXTH48P20P | SE3090K

 

 
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