All MOSFET. NX3008NBKW Datasheet

 

NX3008NBKW MOSFET. Datasheet pdf. Equivalent


   Type Designator: NX3008NBKW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SC70

 NX3008NBKW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NX3008NBKW Datasheet (PDF)

 ..1. Size:1598K  nxp
 nx3008nbkw.pdf

NX3008NBKW NX3008NBKW

NX3008NBKW30 V, 350 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

 5.1. Size:1602K  nxp
 nx3008nbk.pdf

NX3008NBKW NX3008NBKW

NX3008NBK30 V, 400 mA N-channel Trench MOSFETRev. 1 2 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.2. Size:1606K  nxp
 nx3008nbkv.pdf

NX3008NBKW NX3008NBKW

NX3008NBKV30 V, 400 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

 5.3. Size:1618K  nxp
 nx3008nbks.pdf

NX3008NBKW NX3008NBKW

NX3008NBKS30 V, 350 mA dual N-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2

 5.4. Size:1649K  nxp
 nx3008nbkmb.pdf

NX3008NBKW NX3008NBKW

NX3008NBKMB30 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRL3103D1

 

 
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