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NX3008PBKS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX3008PBKS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.1 Ohm
   Paquete / Cubierta: TSSOP6
 

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NX3008PBKS Datasheet (PDF)

 ..1. Size:1620K  nxp
nx3008pbks.pdf pdf_icon

NX3008PBKS

NX3008PBKS30 V, 200 mA dual P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2

 5.1. Size:1607K  nxp
nx3008pbkv.pdf pdf_icon

NX3008PBKS

NX3008PBKV30 V, 220 mA dual P-channel Trench MOSFETRev. 1 29 July 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

 5.2. Size:1602K  nxp
nx3008pbk.pdf pdf_icon

NX3008PBKS

NX3008PBK30 V, 230 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.3. Size:1601K  nxp
nx3008pbkw.pdf pdf_icon

NX3008PBKS

NX3008PBKW30 V, 200 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

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History: H5N5016PL | IPD06N03LBG | FIR120N08PG | AON6458 | NP84N055KLE | NCEAP018N60GU | AON6572

 

 
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