NX3008PBKS. Аналоги и основные параметры

Наименование производителя: NX3008PBKS

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.1 Ohm

Тип корпуса: TSSOP6

Аналог (замена) для NX3008PBKS

- подборⓘ MOSFET транзистора по параметрам

 

NX3008PBKS даташит

 ..1. Size:1620K  nxp
 nx3008pbks.pdf pdf_icon

NX3008PBKS

NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2

 5.1. Size:1607K  nxp
 nx3008pbkv.pdf pdf_icon

NX3008PBKS

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

 5.2. Size:1602K  nxp
 nx3008pbk.pdf pdf_icon

NX3008PBKS

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.3. Size:1601K  nxp
 nx3008pbkw.pdf pdf_icon

NX3008PBKS

NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NX3008CBKS, NX3008CBKV, NX3008NBK, NX3008NBKS, NX3008NBKT, NX3008NBKV, NX3008NBKW, NX3008PBK, 2N7002, NX3008PBKT, NX3008PBKV, NX3008PBKW, PH2520U, PH2925U, PH3120L, PHB110NQ08T, PHB18NQ10T