PH2520U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH2520U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Paquete / Cubierta: LFPAK
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PH2520U Datasheet (PDF)
ph2520u.pdf

PH2520UN-channel TrenchMOS ultra low level FETRev. 03 2 March 2009 Product data sheet1. Product profile1.1 General descriptionUltra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur
ph2525l.pdf

PH2525LN-channel TrenchMOS logic level FETRev. 02 5 December 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Lead-free package Optimized for use in DC-to-DC Very low switching and conductionconverters losse
Otros transistores... NX3008NBKT , NX3008NBKV , NX3008NBKW , NX3008PBK , NX3008PBKS , NX3008PBKT , NX3008PBKV , NX3008PBKW , AO3400 , PH2925U , PH3120L , PHB110NQ08T , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T .
History: APT8024B2VR | PTA08N100 | HX2302 | VS3628GA | SI2333CDS-T1-GE3 | 2SK2773
History: APT8024B2VR | PTA08N100 | HX2302 | VS3628GA | SI2333CDS-T1-GE3 | 2SK2773



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