PHB18NQ10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHB18NQ10T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: D2PAK
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PHB18NQ10T Datasheet (PDF)
phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
phb18nq10t.pdf

PHB18NQ10TN-channel TrenchMOS standard level FETRev. 02 17 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F
phb18nq20t php18nq20t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te
Otros transistores... NX3008PBKS , NX3008PBKT , NX3008PBKV , NX3008PBKW , PH2520U , PH2925U , PH3120L , PHB110NQ08T , IRF9540N , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T .



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