PHB18NQ10T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB18NQ10T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: D2PAK

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PHB18NQ10T datasheet

 ..1. Size:121K  philips
 phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf pdf_icon

PHB18NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

 ..2. Size:903K  nxp
 phb18nq10t.pdf pdf_icon

PHB18NQ10T

PHB18NQ10T N-channel TrenchMOS standard level FET Rev. 02 17 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 7.1. Size:98K  philips
 phb18nq20t php18nq20t 1.pdf pdf_icon

PHB18NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) 180 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench te

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