PHB18NQ10T Datasheet and Replacement. Cross Reference Search

PHB18NQ10T Datasheet (PDF)

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Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

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PHB18NQ10TN-channel TrenchMOS standard level FETRev. 02 17 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

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phb18nq20t php18nq20t 1.pdf pdf_icon

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 AgRDS(ON) 180 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te

Datasheet: NX3008PBKS , NX3008PBKT , NX3008PBKV , NX3008PBKW , PH2520U , PH2925U , PH3120L , PHB110NQ08T , AON7410 , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T .