PHB18NQ10T Specs and Replacement
Type Designator: PHB18NQ10T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: D2PAK
PHB18NQ10T substitution
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PHB18NQ10T datasheet
phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒
phb18nq10t.pdf
PHB18NQ10T N-channel TrenchMOS standard level FET Rev. 02 17 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒
phb18nq20t php18nq20t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ20T, PHB18NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) 180 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench te... See More ⇒
Detailed specifications: NX3008PBKS, NX3008PBKT, NX3008PBKV, NX3008PBKW, PH2520U, PH2925U, PH3120L, PHB110NQ08T, SPP20N60C3, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T, PHB32N06LT, PHB33NQ20T, PHB45NQ10T
Keywords - PHB18NQ10T MOSFET specs
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