PHB29N08T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHB29N08T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 88 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 27 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 19 nC
Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET PHB29N08T
PHB29N08T Datasheet (PDF)
phb29n08t.pdf
PHB29N08TN-channel TrenchMOS standard level FETRev. 03 13 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea
phb29n08t.pdf
PHB29N08TN-channel TrenchMOS standard level FETRev. 03 13 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea
php29n08t phb29n08t-01.pdf
PHP/PHB29N08TTrenchMOS standard level FETRev. 01 29 May 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP29N08T in SOT78 (TO-220AB)PHB29N08T in SOT404 (D2-PAK).2. Features High noise immunity Low on-state resistance.3. Applications Industrial motor cont
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