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PHB29N08T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHB29N08T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: D2PAK
 

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PHB29N08T Datasheet (PDF)

 ..1. Size:181K  philips
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PHB29N08T

PHB29N08TN-channel TrenchMOS standard level FETRev. 03 13 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea

 ..2. Size:678K  nxp
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PHB29N08T

PHB29N08TN-channel TrenchMOS standard level FETRev. 03 13 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea

 0.1. Size:262K  philips
 php29n08t phb29n08t-01.pdf pdf_icon

PHB29N08T

PHP/PHB29N08TTrenchMOS standard level FETRev. 01 29 May 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP29N08T in SOT78 (TO-220AB)PHB29N08T in SOT404 (D2-PAK).2. Features High noise immunity Low on-state resistance.3. Applications Industrial motor cont

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History: AOD425 | SSPL6005

 

 
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