All MOSFET. PHB29N08T Datasheet

 

PHB29N08T Datasheet and Replacement


   Type Designator: PHB29N08T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: D2PAK
 

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PHB29N08T Datasheet (PDF)

 ..1. Size:181K  philips
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PHB29N08T

PHB29N08TN-channel TrenchMOS standard level FETRev. 03 13 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea

 ..2. Size:678K  nxp
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PHB29N08T

PHB29N08TN-channel TrenchMOS standard level FETRev. 03 13 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea

 0.1. Size:262K  philips
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PHB29N08T

PHP/PHB29N08TTrenchMOS standard level FETRev. 01 29 May 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP29N08T in SOT78 (TO-220AB)PHB29N08T in SOT404 (D2-PAK).2. Features High noise immunity Low on-state resistance.3. Applications Industrial motor cont

Datasheet: PH2925U , PH3120L , PHB110NQ08T , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , 4N60 , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 , PHC2300 .

History: 2SK2045LS | ELM14430AA | IXTH6N150 | RJK0629DPE | 2N5904 | VS3640AE | NCE60NF031T

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