PHB29N08T Specs and Replacement

Type Designator: PHB29N08T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: D2PAK

PHB29N08T substitution

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PHB29N08T datasheet

 ..1. Size:181K  philips
 phb29n08t.pdf pdf_icon

PHB29N08T

PHB29N08T N-channel TrenchMOS standard level FET Rev. 03 13 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea... See More ⇒

 ..2. Size:678K  nxp
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PHB29N08T

PHB29N08T N-channel TrenchMOS standard level FET Rev. 03 13 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea... See More ⇒

 0.1. Size:262K  philips
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PHB29N08T

PHP/PHB29N08T TrenchMOS standard level FET Rev. 01 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK). 2. Features High noise immunity Low on-state resistance. 3. Applications Industrial motor cont... See More ⇒

Detailed specifications: PH2925U, PH3120L, PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, PHB27NQ10T, 12N60, PHB32N06LT, PHB33NQ20T, PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, PHB66NQ03LT, PHC21025, PHC2300

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