PHP18NQ10T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP18NQ10T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO220AB

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PHP18NQ10T datasheet

 ..1. Size:121K  philips
 phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf pdf_icon

PHP18NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 A g RDS(ON) 90 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

 ..2. Size:777K  nxp
 php18nq10t.pdf pdf_icon

PHP18NQ10T

PHP18NQ10T N-channel TrenchMOS standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 6.1. Size:205K  philips
 php18nq11t.pdf pdf_icon

PHP18NQ10T

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

 6.2. Size:762K  nxp
 php18nq11t.pdf pdf_icon

PHP18NQ10T

PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

MOSTRAR MÁS

Otros transistores... PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T, IRFZ24N, PHP18NQ11T, PHP191NQ06LT, PHP20N06T, PHP20NQ20T, PHP225, PHP23NQ11T, PHP27NQ11T, PHP28NQ15T