Справочник MOSFET. PHP18NQ10T

 

PHP18NQ10T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PHP18NQ10T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для PHP18NQ10T

 

 

PHP18NQ10T Datasheet (PDF)

 ..1. Size:121K  philips
 phb18nq10t phd18nq10t php18nq10t phd18nq10t.pdf

PHP18NQ10T PHP18NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 18 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

 ..2. Size:777K  nxp
 php18nq10t.pdf

PHP18NQ10T PHP18NQ10T

PHP18NQ10TN-channel TrenchMOS standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 6.1. Size:205K  philips
 php18nq11t.pdf

PHP18NQ10T PHP18NQ10T

PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat

 6.2. Size:762K  nxp
 php18nq11t.pdf

PHP18NQ10T PHP18NQ10T

PHP18NQ11TN-channel TrenchMOS standard level FETRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat

 6.3. Size:260K  inchange semiconductor
 php18nq11t.pdf

PHP18NQ10T PHP18NQ10T

isc N-Channel MOSFET Transistor PHP18NQ11TDESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 110V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 

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