PHP30NQ15T Todos los transistores

 ..1. Size:288K  philips
 php30nq15t phb30nq15t.pdf

PHP30NQ15T; PHB30NQ15T N-channel enhancement mode field-effect transistor Rev. 02 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP30NQ15T in SOT78 (TO-220AB) PHB30NQ15T in SOT404 (D2-PAK). 2. Features Fast switching Low on-state resistance.

 ..2. Size:100K  philips
 phb30nq15t php30nq15t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 A g RDS(ON) 63 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic

 9.1. Size:105K  philips
 phd3055e php3055e 4.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switching ID = 10.3 A g RDS(ON) 150 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

 9.2. Size:317K  philips
 php3055e phd3055e.pdf

PHP/PHD3055E TrenchMOS standard level FET Rev. 06 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance. 3. Applications DC to DC converters Switc

 9.3. Size:51K  philips
 php3055l 2.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch

 9.4. Size:52K  philips
 php3055e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching and Ptot Total power dissi

 9.5. Size:75K  philips
 phb3055e phd3055e php3055e 3.pdf

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistance g RDS(ON) 150 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhance