PHP30NQ15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHP30NQ15T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
Paquete / Cubierta: TO220AB

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PHP30NQ15T Datasheet (PDF)

..1. Size:288K philips
php30nq15t phb30nq15t.pdf

PHP30NQ15T; PHB30NQ15TN-channel enhancement mode field-effect transistorRev. 02 12 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP30NQ15T in SOT78 (TO-220AB)PHB30NQ15T in SOT404 (D2-PAK).2. Features Fast switching Low on-state resistance.

..2. Size:100K philips
phb30nq15t php30nq15t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic

9.1. Size:105K philips
phd3055e php3055e 4.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switchingID = 10.3 AgRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

9.2. Size:317K philips
php3055e phd3055e.pdf

PHP/PHD3055ETrenchMOS standard level FETRev. 06 25 March 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP3055E in SOT78 (TO-220AB)PHD3055E in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance.3. Applications DC to DC converters Switc

9.3. Size:51K philips
php3055l 2.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switch

9.4. Size:52K philips
php3055e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switching and Ptot Total power dissi

9.5. Size:75K philips
phb3055e phd3055e php3055e 3.pdf

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistancegRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhance

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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