PHP30NQ15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PHP30NQ15T; PHB30NQ15TN-channel enhancement mode field-effect transistorRev. 02 12 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP30NQ15T in SOT78 (TO-220AB)PHB30NQ15T in SOT404 (D2-PAK).2. Features Fast switching Low on-state resistance.

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP30NQ15T, PHB30NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switchingID = 10.3 AgRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

PHP/PHD3055ETrenchMOS standard level FETRev. 06 25 March 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP3055E in SOT78 (TO-220AB)PHD3055E in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance.3. Applications DC to DC converters Switc

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switch

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switching and Ptot Total power dissi

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistancegRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhance