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PHP33NQ20T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHP33NQ20T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
   Paquete / Cubierta: TO220AB
 

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PHP33NQ20T Datasheet (PDF)

 ..1. Size:84K  philips
 php33nq20t phb33nq20t.pdf pdf_icon

PHP33NQ20T

PHP/PHB33NQ20TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC

 ..2. Size:681K  nxp
 php33nq20t.pdf pdf_icon

PHP33NQ20T

PHP33NQ20TN-channel TrenchMOS standard level FETRev. 02 3 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

 ..3. Size:261K  inchange semiconductor
 php33nq20t.pdf pdf_icon

PHP33NQ20T

isc N-Channel MOSFET Transistor PHP33NQ20TFEATURESDrain Current I = 32.7A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =77m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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History: CHM20N06PAGP | PZ5203QV | HTD2K1P10 | 2SK4212-ZK | FKP253 | PTF8N65 | P8008HVA

 

 
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