PHP33NQ20T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP33NQ20T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm

Encapsulados: TO220AB

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PHP33NQ20T datasheet

 ..1. Size:84K  philips
 php33nq20t phb33nq20t.pdf pdf_icon

PHP33NQ20T

PHP/PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 01 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge. 1.3 Applications DC-to-DC

 ..2. Size:681K  nxp
 php33nq20t.pdf pdf_icon

PHP33NQ20T

PHP33NQ20T N-channel TrenchMOS standard level FET Rev. 02 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe

 ..3. Size:261K  inchange semiconductor
 php33nq20t.pdf pdf_icon

PHP33NQ20T

isc N-Channel MOSFET Transistor PHP33NQ20T FEATURES Drain Current I = 32.7A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =77m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

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