PHP33NQ20T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP33NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 230
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 32.7
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 32.2
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077
Ohm
Package:
TO220AB
PHP33NQ20T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP33NQ20T
Datasheet (PDF)
..1. Size:84K philips
php33nq20t phb33nq20t.pdf
PHP/PHB33NQ20TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC
..2. Size:681K nxp
php33nq20t.pdf
PHP33NQ20TN-channel TrenchMOS standard level FETRev. 02 3 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
..3. Size:261K inchange semiconductor
php33nq20t.pdf
isc N-Channel MOSFET Transistor PHP33NQ20TFEATURESDrain Current I = 32.7A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =77m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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