PHT6N06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AUsing trench technology

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AThe device features very low Dr

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench techno

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 5.9 A Stable off-state characteristics High thermal cycling performance RDS(ON) 30 m (VGS = 5 V)g Surface mounting packageRDS(ON)