PHT6N06T Todos los transistores

 

PHT6N06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHT6N06T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SC73
 

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PHT6N06T Datasheet (PDF)

 ..1. Size:58K  philips
 pht6n06t 1.pdf pdf_icon

PHT6N06T

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AUsing trench technology

 7.1. Size:54K  philips
 pht6n06lt 2.pdf pdf_icon

PHT6N06T

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AThe device features very low Dr

 8.1. Size:57K  philips
 pht6n03t 2.pdf pdf_icon

PHT6N06T

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench techno

 8.2. Size:43K  philips
 pht6n03lt 3.pdf pdf_icon

PHT6N06T

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 5.9 A Stable off-state characteristics High thermal cycling performance RDS(ON) 30 m (VGS = 5 V)g Surface mounting packageRDS(ON)

MOSTRAR MÁS

Otros transistores... PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T , EMB04N03H , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN .

 

 
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