PHT6N06T Spec and Replacement
Type Designator: PHT6N06T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 8.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SC73
PHT6N06T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHT6N06T Specs
pht6n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A Using trench technology... See More ⇒
pht6n06lt 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A The device features very low Dr... See More ⇒
pht6n03t 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 A trench techno... See More ⇒
Detailed specifications: PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T , EMB04N03H , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN .
History: STP4N100XI
Keywords - PHT6N06T MOSFET specs
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History: STP4N100XI
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