PHT6N06T Datasheet and Replacement. Cross Reference Search

PHT6N06T Datasheet (PDF)

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Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AUsing trench technology

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Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AThe device features very low Dr

8.1. Size:57K philips
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Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench techno

8.2. Size:43K philips
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Philips Semiconductors Product specification TrenchMOS transistor PHT6N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 5.9 A Stable off-state characteristics High thermal cycling performance RDS(ON) 30 m (VGS = 5 V)g Surface mounting packageRDS(ON)

Datasheet: PHP30NQ15T , PHP33NQ20T , PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T , 2SK3918 , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN .