PMBF170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PMBF170
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO236AB

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PMBF170 Datasheet (PDF)

..1. Size:374K nxp
pmbf170.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

0.1. Size:277K philips
pmbf170-03.pdf

PMBF170N-channel enhancement mode field-effect transistorRev. 03 23 June 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PMBF170 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

8.1. Size:228K philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

9.1. Size:59K philips
pmbf107 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBF107N-channel enhancement modevertical D-MOS transistor1998 Mar 06Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalPMBF107D-MOS transistorFEATURES PINNING - SOT23 Direct interface to C

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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