PMBF170 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PMBF170
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO236AB
- подбор MOSFET транзистора по параметрам
PMBF170 Datasheet (PDF)
pmbf170.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmbf170-03.pdf

PMBF170N-channel enhancement mode field-effect transistorRev. 03 23 June 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PMBF170 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
pmbfj174 pmbf175 pmbf176 pmbf177.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
pmbf107 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBF107N-channel enhancement modevertical D-MOS transistor1998 Mar 06Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalPMBF107D-MOS transistorFEATURES PINNING - SOT23 Direct interface to C
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RCJ510N25 | R6515ENX | BRCS100N06BD | 2SK3080 | IRFU4615P | TPC65R260M | 2SK417
History: RCJ510N25 | R6515ENX | BRCS100N06BD | 2SK3080 | IRFU4615P | TPC65R260M | 2SK417



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