Справочник MOSFET. PMBF170

 

PMBF170 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMBF170
   Маркировка: KX_pKX
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO236AB

 Аналог (замена) для PMBF170

 

 

PMBF170 Datasheet (PDF)

 ..1. Size:374K  nxp
 pmbf170.pdf

PMBF170 PMBF170

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.1. Size:277K  philips
 pmbf170-03.pdf

PMBF170 PMBF170

PMBF170N-channel enhancement mode field-effect transistorRev. 03 23 June 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PMBF170 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

 8.1. Size:228K  philips
 pmbfj174 pmbf175 pmbf176 pmbf177.pdf

PMBF170 PMBF170

DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 9.1. Size:59K  philips
 pmbf107 3.pdf

PMBF170 PMBF170

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBF107N-channel enhancement modevertical D-MOS transistor1998 Mar 06Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalPMBF107D-MOS transistorFEATURES PINNING - SOT23 Direct interface to C

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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