PMBF170. Аналоги и основные параметры
Наименование производителя: PMBF170
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.83 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO236AB
Аналог (замена) для PMBF170
- подборⓘ MOSFET транзистора по параметрам
PMBF170 даташит
pmbf170.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmbf170-03.pdf
PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PMBF170 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.
pmbfj174 pmbf175 pmbf176 pmbf177.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
pmbf107 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor 1998 Mar 06 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical PMBF107 D-MOS transistor FEATURES PINNING - SOT23 Direct interface to C
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History: 2SK1468 | ST10E4
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