PMBF170. Аналоги и основные параметры

Наименование производителя: PMBF170

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm

Тип корпуса: TO236AB

Аналог (замена) для PMBF170

- подборⓘ MOSFET транзистора по параметрам

 

PMBF170 даташит

 ..1. Size:374K  nxp
pmbf170.pdfpdf_icon

PMBF170

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.1. Size:277K  philips
pmbf170-03.pdfpdf_icon

PMBF170

PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PMBF170 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

 8.1. Size:228K  philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdfpdf_icon

PMBF170

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 9.1. Size:59K  philips
pmbf107 3.pdfpdf_icon

PMBF170

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor 1998 Mar 06 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical PMBF107 D-MOS transistor FEATURES PINNING - SOT23 Direct interface to C

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