PMFPB6532UP Todos los transistores

 

PMFPB6532UP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMFPB6532UP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SOT1118
 

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PMFPB6532UP Datasheet (PDF)

 ..1. Size:255K  nxp
 pmfpb6532up.pdf pdf_icon

PMFPB6532UP

PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 7.1. Size:257K  nxp
 pmfpb6545up.pdf pdf_icon

PMFPB6532UP

PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2

 9.1. Size:277K  nxp
 pmfpb8032xp.pdf pdf_icon

PMFPB6532UP

PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

 9.2. Size:280K  nxp
 pmfpb8040xp.pdf pdf_icon

PMFPB6532UP

PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount

MOSTRAR MÁS

Otros transistores... PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , IRF840 , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN .

History: NTD80N02 | SUD50N03-16P | 2SK4081D | HM50P03K | APT5014B2VRG | AP2324GN-HF | UTT25P10L-TF3-T

 

 
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