PMFPB6532UP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMFPB6532UP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.52 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SOT1118
Búsqueda de reemplazo de PMFPB6532UP MOSFET
PMFPB6532UP Datasheet (PDF)
pmfpb6532up.pdf

PMFPB6532UP20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combinationRev. 2 1 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2
pmfpb6545up.pdf

PMFPB6545UP20 V, 3.5 A / 440 mV VF P-channel MOSFET-Schottky combinationRev. 2 4 June 2012 Product data sheet1. Product profile1.1 General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2
pmfpb8032xp.pdf

PMFPB8032XP20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount
pmfpb8040xp.pdf

PMFPB8040XP20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottkycombination21 December 2012 Product data sheet1. General descriptionSmall-signal P-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)Surface-Mount
Otros transistores... PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , IRF840 , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN .
History: NTD80N02 | SUD50N03-16P | 2SK4081D | HM50P03K | APT5014B2VRG | AP2324GN-HF | UTT25P10L-TF3-T
History: NTD80N02 | SUD50N03-16P | 2SK4081D | HM50P03K | APT5014B2VRG | AP2324GN-HF | UTT25P10L-TF3-T



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