PMK35EP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMK35EP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 6.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 14.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: SO8
PMK35EP Datasheet (PDF)
pmk35ep.pdf

PMK35EPP-channel TrenchMOS extremely low level FETRev. 02 29 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1
pmk35ep.pdf

PMK35EPP-channel TrenchMOS extremely low level FETRev. 02 29 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1
pmk35ep.pdf

PMK35EPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG
Otros transistores... PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN , PMK30EP , IRF630 , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , PMN27UN .
History: NCEP60T20
History: NCEP60T20



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