PMK35EP
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMK35EP
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 6.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 14.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019
Ohm
Package:
SO8
PMK35EP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMK35EP
Datasheet (PDF)
..1. Size:289K philips
pmk35ep.pdf
PMK35EPP-channel TrenchMOS extremely low level FETRev. 02 29 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1
..2. Size:864K nxp
pmk35ep.pdf
PMK35EPP-channel TrenchMOS extremely low level FETRev. 02 29 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1
..3. Size:830K cn vbsemi
pmk35ep.pdf
PMK35EPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG
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