All MOSFET. PMK35EP Datasheet

 

PMK35EP Datasheet and Replacement


   Type Designator: PMK35EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 14.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SO8
 

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PMK35EP Datasheet (PDF)

 ..1. Size:289K  philips
 pmk35ep.pdf pdf_icon

PMK35EP

PMK35EPP-channel TrenchMOS extremely low level FETRev. 02 29 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1

 ..2. Size:864K  nxp
 pmk35ep.pdf pdf_icon

PMK35EP

PMK35EPP-channel TrenchMOS extremely low level FETRev. 02 29 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1

 ..3. Size:830K  cn vbsemi
 pmk35ep.pdf pdf_icon

PMK35EP

PMK35EPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG

Datasheet: PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN , PMK30EP , IRF640N , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , PMN27UN .

History: SFG10R12AF

Keywords - PMK35EP MOSFET datasheet

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