APT1001R1HN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT1001R1HN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 280 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO258

 Búsqueda de reemplazo de APT1001R1HN MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT1001R1HN datasheet

 4.1. Size:67K  apt
 apt1001r1hvr.pdf pdf_icon

APT1001R1HN

APT1001R1HVR 1000V 9A 1.100 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Low

 5.1. Size:68K  apt
 apt1001r1avr.pdf pdf_icon

APT1001R1HN

APT1001R1AVR 1000V 9A 1.100 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 5.2. Size:70K  apt
 apt1001r1bvfr.pdf pdf_icon

APT1001R1HN

APT1001R1BVFR 1000V 11A 1.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 5.3. Size:52K  apt
 apt1001r1bn.pdf pdf_icon

APT1001R1HN

D TO-247 G APT1001R1BN 1000V 10.5A 1.10 S APT1001R3BN 1000V 10.0A 1.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1001RBN 1001R3BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 10.5 10 Amps IDM Pulsed Drain Curren

MOSTRAR MÁS

Otros transistores... ALD1101APA, ALD1101BPA, ALD1101DA, ALD1101MA, APT1001R1AN, APT1001R1AVR, APT1001R1BN, APT1001R1BVFR, 2N7000, APT1001R1HVR, APT1001R2AN, APT1001R2BN, APT1001R2HN, APT1001R3AN, APT1001R3BN, APT1001R3HN, APT1001R6BN