APT1001R1HN - параметры транзистора MOSFET, его аналоги, datasheet

APT1001R1HN Datasheet (PDF)

4.1. Size:67K apt
apt1001r1hvr.pdf pdf_icon

APT1001R1HVR1000V 9A 1.100POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Low

5.1. Size:68K apt
apt1001r1avr.pdf pdf_icon

APT1001R1AVR1000V 9A 1.100POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

5.2. Size:70K apt
apt1001r1bvfr.pdf pdf_icon

APT1001R1BVFR1000V 11A 1.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

5.3. Size:52K apt
apt1001r1bn.pdf pdf_icon

DTO-247GAPT1001R1BN 1000V 10.5A 1.10SAPT1001R3BN 1000V 10.0A 1.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1001RBN 1001R3BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C10.5 10AmpsIDM Pulsed Drain Curren

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