PMN27UN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMN27UN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: TSOP6

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PMN27UN datasheet

 8.1. Size:1566K  nxp
 pmn27up.pdf pdf_icon

PMN27UN

PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switch

 9.1. Size:275K  nxp
 pmn27xpea.pdf pdf_icon

PMN27UN

PMN27XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3. A

 9.2. Size:199K  nxp
 pmn27xpe.pdf pdf_icon

PMN27UN

PMN27XPE 20 V, single P-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection 1.

Otros transistores... PMK35EP, PMK50XP, PML260SN, PML340SN, PMN20EN, PMN23UN, PMN25EN, PMN25UN, 2N7000, PMN27UP, PMN28UN, PMN34LN, PMN34UN, PMN34UP, PMN35EN, PMN38EN, PMN40LN