PMN27UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMN27UN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de PMN27UN MOSFET
PMN27UN Datasheet (PDF)
pmn27up.pdf

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pmn27xpea.pdf

PMN27XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified3. A
pmn27xpe.pdf

PMN27XPE20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection1.
Otros transistores... PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , IRF9540 , PMN27UP , PMN28UN , PMN34LN , PMN34UN , PMN34UP , PMN35EN , PMN38EN , PMN40LN .
History: AP50T10GH-HF | HGA098N10A | PMN20ENA
History: AP50T10GH-HF | HGA098N10A | PMN20ENA



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