PMN27UN Datasheet and Replacement
Type Designator: PMN27UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 5.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TSOP6
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PMN27UN Datasheet (PDF)
pmn27up.pdf

PMN27UP20 V, 5.7 A P-channel Trench MOSFETRev. 1 13 July 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switch
pmn27xpea.pdf

PMN27XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified3. A
pmn27xpe.pdf

PMN27XPE20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection1.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HFS10N65JS | HLML6401 | AOT11S60L | SST80R850S | RFM15N06L | IPL60R2K1C6S | AP85T03GH-HF
Keywords - PMN27UN MOSFET datasheet
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History: HFS10N65JS | HLML6401 | AOT11S60L | SST80R850S | RFM15N06L | IPL60R2K1C6S | AP85T03GH-HF



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