PMN40LN Todos los transistores

 

PMN40LN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMN40LN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: TSOP6
 

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PMN40LN Datasheet (PDF)

 9.1. Size:722K  nxp
 pmn40ene.pdf pdf_icon

PMN40LN

PMN40ENE30 V, N-channel Trench MOSFET24 May 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipatio

 9.2. Size:274K  nxp
 pmn40upea.pdf pdf_icon

PMN40LN

PMN40UPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 4 kV ESD protection

 9.3. Size:301K  nxp
 pmn40ena.pdf pdf_icon

PMN40LN

PMN40ENA60 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE

 9.4. Size:199K  nxp
 pmn40upe.pdf pdf_icon

PMN40LN

PMN40UPE20 V, single P-channel Trench MOSFET13 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Fast switching Trench MOSFET technology

MOSTRAR MÁS

Otros transistores... PMN27UN , PMN27UP , PMN28UN , PMN34LN , PMN34UN , PMN34UP , PMN35EN , PMN38EN , IRFP260 , PMN45EN , PMN48XP , PMN49EN , PMN55LN , PMR280UN , PMR290XN , PMR370XN , PMR400UN .

History: 2N4416AC1B | IPI50R299CP | CS8N50A8R | IRFSL3206PBF | OSG65R460AZF | OSG65R380FZF | KP801B

 

 
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