PMV20XN Todos los transistores

 

PMV20XN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV20XN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO236AB
 

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PMV20XN Datasheet (PDF)

 ..1. Size:332K  tysemi
 pmv20xn.pdf pdf_icon

PMV20XN

Product specificationPMV20XN30 V, 4.8 A N-channel Trench MOSFETRev. 1 5 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t

 0.1. Size:719K  nxp
 pmv20xnea.pdf pdf_icon

PMV20XN

PMV20XNEA20 V, N-channel Trench MOSFET9 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar

 0.2. Size:250K  nxp
 pmv20xne.pdf pdf_icon

PMV20XN

PMV20XNE30 V, N-channel Trench MOSFET10 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12

 9.1. Size:308K  nxp
 pmv20en.pdf pdf_icon

PMV20XN

PMV20EN30 V, N-channel Trench MOSFET5 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat

MOSTRAR MÁS

Otros transistores... PMR370XN , PMR400UN , PMR780SN , PMT21EN , PMT29EN , PMV117EN , PMV160UP , PMV16UN , 4N60 , PMV213SN , PMV22EN , PMV28UN , PMV30UN , PMV30XN , PMV31XN , PMV32UP , PMV37EN .

History: HTD1K5N10 | QM3014M6

 

 
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