Справочник MOSFET. PMV20XN

 

PMV20XN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMV20XN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.51 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TO236AB

 Аналог (замена) для PMV20XN

 

 

PMV20XN Datasheet (PDF)

 ..1. Size:332K  tysemi
 pmv20xn.pdf

PMV20XN PMV20XN

Product specificationPMV20XN30 V, 4.8 A N-channel Trench MOSFETRev. 1 5 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t

 0.1. Size:719K  nxp
 pmv20xnea.pdf

PMV20XN PMV20XN

PMV20XNEA20 V, N-channel Trench MOSFET9 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar

 0.2. Size:250K  nxp
 pmv20xne.pdf

PMV20XN PMV20XN

PMV20XNE30 V, N-channel Trench MOSFET10 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12

 9.1. Size:308K  nxp
 pmv20en.pdf

PMV20XN PMV20XN

PMV20EN30 V, N-channel Trench MOSFET5 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat

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