PMV30UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMV30UN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.9 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 5.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.7 V
Resistencia entre drenaje y fuente RDS(on): 0.036 Ohm
Paquete / Cubierta: TO236AB
Búsqueda de reemplazo de MOSFET PMV30UN
PMV30UN Datasheet (PDF)
pmv30un.pdf
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pmv30un.pdf
Product specificationPMV30UNTrenchMOS ultra low level FETRev. 01 25 June 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV30UN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High-speed swi
pmv30un2.pdf
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pmv30xpea.pdf
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Product specificationPMV30XN20 V, 3.2 A N-channel Trench MOSFETRev. 1 22 June 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t
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