PMV30UN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PMV30UN
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.9 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 0.7 V
Максимально допустимый постоянный ток стока |Id|: 5.7 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.036 Ohm
Тип корпуса: TO236AB
PMV30UN Datasheet (PDF)
pmv30un.pdf
PMV30UNTrenchMOS ultra low level FETRev. 01 25 June 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV30UN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High-speed switches.1.4 Qui
pmv30un.pdf
Product specificationPMV30UNTrenchMOS ultra low level FETRev. 01 25 June 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV30UN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High-speed swi
pmv30un2.pdf
PMV30UN220 V, N-channel Trench MOSFET24 April 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip
pmv30enea.pdf
PMV30ENEA40 V N-channel Trench MOSFET2 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El
pmv30xpea.pdf
PMV30XPEA20 V, P-channel Trench MOSFET30 October 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot =
pmv30xpa.pdf
PMV30XPA20 V, P-channel Trench MOSFET28 April 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology Ve
pmv30xn.pdf
Product specificationPMV30XN20 V, 3.2 A N-channel Trench MOSFETRev. 1 22 June 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
