PMV45EN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PMV45EN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV45EN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: TO236AB

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PMV45EN datasheet

..1. Size:238K philips
pmv45en.pdf pdf_icon

PMV45EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV45EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High speed switch. 1

..2. Size:204K tysemi
pmv45en.pdf pdf_icon

Product specification PMV45EN N-channel TrenchMOS logic level FET Rev. 2 7 November 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

0.1. Size:463K nxp
pmv45en2.pdf pdf_icon

PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

9.1. Size:727K nxp
pmv450enea.pdf pdf_icon

PMV450ENEA 60 V, N-channel Trench MOSFET 23 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

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PMV45EN Todos los transistores