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PMV45EN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV45EN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TO236AB
 

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PMV45EN Datasheet (PDF)

 ..1. Size:238K  philips
 pmv45en.pdf pdf_icon

PMV45EN

PMV45ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV45EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1

 ..2. Size:204K  tysemi
 pmv45en.pdf pdf_icon

PMV45EN

Product specificationPMV45ENN-channel TrenchMOS logic level FETRev. 2 7 November 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

 0.1. Size:463K  nxp
 pmv45en2.pdf pdf_icon

PMV45EN

PMV45EN230 V, N-channel Trench MOSFET3 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

 9.1. Size:727K  nxp
 pmv450enea.pdf pdf_icon

PMV45EN

PMV450ENEA60 V, N-channel Trench MOSFET23 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

MOSTRAR MÁS

Otros transistores... PMV22EN , PMV28UN , PMV30UN , PMV30XN , PMV31XN , PMV32UP , PMV37EN , PMV40UN , IRF1407 , PMV48XP , PMV56XN , PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN .

 

 
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