All MOSFET. PMV45EN Datasheet

 

PMV45EN MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV45EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO236AB

 PMV45EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV45EN Datasheet (PDF)

 ..1. Size:238K  philips
 pmv45en.pdf

PMV45EN PMV45EN

PMV45ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV45EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1

 ..2. Size:204K  tysemi
 pmv45en.pdf

PMV45EN PMV45EN

Product specificationPMV45ENN-channel TrenchMOS logic level FETRev. 2 7 November 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

 0.1. Size:463K  nxp
 pmv45en2.pdf

PMV45EN PMV45EN

PMV45EN230 V, N-channel Trench MOSFET3 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipa

 9.1. Size:727K  nxp
 pmv450enea.pdf

PMV45EN PMV45EN

PMV450ENEA60 V, N-channel Trench MOSFET23 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STP30N05FI

 

 
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