PMV65XP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV65XP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.92 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm

Encapsulados: TO236AB

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PMV65XP datasheet

 ..1. Size:79K  philips
 pmv65xp.pdf pdf_icon

PMV65XP

PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low threshold voltage Low on-state resistance. 1.3 Applications Low power DC-to-DC converters Battery management Load sw

 ..2. Size:264K  nxp
 pmv65xp.pdf pdf_icon

PMV65XP

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applicati

 ..3. Size:324K  tysemi
 pmv65xp.pdf pdf_icon

PMV65XP

Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET t

 0.1. Size:238K  nxp
 pmv65xpea.pdf pdf_icon

PMV65XP

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot

MOSTRAR MÁS

Otros transistores... PMV31XN, PMV32UP, PMV37EN, PMV40UN, PMV45EN, PMV48XP, PMV56XN, PMV60EN, 4N60, PMZ1000UN, PMZ250UN, PMZ270XN, PMZ350XN, PMZ390UN, PMZ760SN, PSMN004-60B, PSMN005-30K