PMV65XP Datasheet. Specs and Replacement

Type Designator: PMV65XP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm

Package: TO236AB

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PMV65XP datasheet

 ..1. Size:79K  philips
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PMV65XP

PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low threshold voltage Low on-state resistance. 1.3 Applications Low power DC-to-DC converters Battery management Load sw... See More ⇒

 ..2. Size:264K  nxp
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PMV65XP

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applicati... See More ⇒

 ..3. Size:324K  tysemi
 pmv65xp.pdf pdf_icon

PMV65XP

Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET t... See More ⇒

 0.1. Size:238K  nxp
 pmv65xpea.pdf pdf_icon

PMV65XP

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot ... See More ⇒

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Detailed specifications: PMV31XN, PMV32UP, PMV37EN, PMV40UN, PMV45EN, PMV48XP, PMV56XN, PMV60EN, IRFP250, PMZ1000UN, PMZ250UN, PMZ270XN, PMZ350XN, PMZ390UN, PMZ760SN, PSMN004-60B, PSMN005-30K

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