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PMV65XP PDF Specs and Replacement


   Type Designator: PMV65XP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO236AB
 

 PMV65XP substitution

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PMV65XP PDF Specs

 ..1. Size:79K  philips
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PMV65XP

PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low threshold voltage Low on-state resistance. 1.3 Applications Low power DC-to-DC converters Battery management Load sw... See More ⇒

 ..2. Size:264K  nxp
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PMV65XP

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applicati... See More ⇒

 ..3. Size:324K  tysemi
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PMV65XP

Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET t... See More ⇒

 0.1. Size:238K  nxp
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PMV65XP

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot ... See More ⇒

Detailed specifications: PMV31XN , PMV32UP , PMV37EN , PMV40UN , PMV45EN , PMV48XP , PMV56XN , PMV60EN , 4N60 , PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN , PMZ390UN , PMZ760SN , PSMN004-60B , PSMN005-30K .

Keywords - PMV65XP MOSFET specs

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