PMZ390UN Todos los transistores

 

PMZ390UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMZ390UN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.78 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: SOT883
 

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PMZ390UN Datasheet (PDF)

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PMZ390UN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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PMZ390UN

PMZ390UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele

Otros transistores... PMV48XP , PMV56XN , PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN , 13N50 , PMZ760SN , PSMN004-60B , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , PSMN009-100B , PSMN009-100P .

History: CS6N70CF | IRF6655

 

 
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