PMZ390UN Specs and Replacement
Type Designator: PMZ390UN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.78 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: SOT883
PMZ390UN substitution
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PMZ390UN datasheet
pmz390un.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
pmz390une.pdf
PMZ390UNE 30 V, N-channel Trench MOSFET 12 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Ele... See More ⇒
Detailed specifications: PMV48XP, PMV56XN, PMV60EN, PMV65XP, PMZ1000UN, PMZ250UN, PMZ270XN, PMZ350XN, 5N60, PMZ760SN, PSMN004-60B, PSMN005-30K, PSMN005-75B, PSMN006-20K, PSMN008-75B, PSMN009-100B, PSMN009-100P
Keywords - PMZ390UN MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: R6006AND | STY139N65M5
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