PSMN009-100B Todos los transistores

 

PSMN009-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN009-100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
   Paquete / Cubierta: D2PAK
 

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PSMN009-100B Datasheet (PDF)

 ..1. Size:685K  nxp
 psmn009-100b.pdf pdf_icon

PSMN009-100B

PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

 3.1. Size:92K  philips
 psmn009-100w.pdf pdf_icon

PSMN009-100B

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 AgRDS(ON) 9 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

 3.2. Size:771K  nxp
 psmn009-100p.pdf pdf_icon

PSMN009-100B

PSMN009-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 4 27 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 7.1. Size:271K  philips
 psmn009 100p 100b-01.pdf pdf_icon

PSMN009-100B

PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications

MOSTRAR MÁS

Otros transistores... PMZ350XN , PMZ390UN , PMZ760SN , PSMN004-60B , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , IRFB31N20D , PSMN009-100P , PSMN011-30YL , PSMN011-80YS , PSMN012-100YS , PSMN012-60YS , PSMN012-80PS , PSMN013-100BS , PSMN013-100ES .

 

 
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