PSMN009-100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN009-100B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 156 nC
Resistencia entre drenaje y fuente RDS(on): 0.0088 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET PSMN009-100B
PSMN009-100B Datasheet (PDF)
psmn009-100b.pdf
PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic
psmn009-100w.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 AgRDS(ON) 9 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil
psmn009-100p.pdf
PSMN009-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 4 27 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap
psmn009 100p 100b-01.pdf
PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications
Otros transistores... PMZ350XN , PMZ390UN , PMZ760SN , PSMN004-60B , PSMN005-30K , PSMN005-75B , PSMN006-20K , PSMN008-75B , 13N50 , PSMN009-100P , PSMN011-30YL , PSMN011-80YS , PSMN012-100YS , PSMN012-60YS , PSMN012-80PS , PSMN013-100BS , PSMN013-100ES .
History: HM1P10MR
