Справочник MOSFET. PSMN009-100B

 

PSMN009-100B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN009-100B
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 230 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 75 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 156 nC
   Сопротивление сток-исток открытого транзистора (Rds): 0.0088 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для PSMN009-100B

 

 

PSMN009-100B Datasheet (PDF)

 ..1. Size:685K  nxp
psmn009-100b.pdf

PSMN009-100B PSMN009-100B

PSMN009-100BN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 July 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

 3.1. Size:92K  philips
psmn009-100w.pdf

PSMN009-100B PSMN009-100B

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN009-100W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 100 AgRDS(ON) 9 msGENERAL DESCRIPTION PINNING SOT429 (TO247)SiliconMAX products use the latest PIN DESCRIPTIONPhil

 3.2. Size:771K  nxp
psmn009-100p.pdf

PSMN009-100B PSMN009-100B

PSMN009-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 4 27 December 2011 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial ap

 7.1. Size:271K  philips
psmn009 100p 100b-01.pdf

PSMN009-100B PSMN009-100B

PSMN009-100P/100BN-channel enhancement mode field-effect transistorRev. 01 29 April 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PSMN009-100P in SOT78 (TO-220AB)PSMN009-100B in SOT404 (D2-PAK).2. Features Low on-state resistance Fast switching.3. Applications

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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