PSMN013-100ES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN013-100ES
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0139 Ohm
Paquete / Cubierta: I2PAK
Búsqueda de reemplazo de PSMN013-100ES MOSFET
PSMN013-100ES Datasheet (PDF)
psmn013-100es.pdf

PSMN013-100ESN-channel 100 V 13.9 m standard level MOSFET in I2PAKRev. 02 19 February 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn013-100ps.pdf

PSMN013-100PSN-channel 100V 13.9m standard level MOSFET in TO220.Rev. 02 22 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc
psmn013-100yse.pdf

PSMN013-100YSEN-channel 100 V 13 m standard level MOSFET in LFPAK5618 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whil
psmn013-100xs.pdf

PSMN013-100XSN-channel 100V 13 m standard level MOSFET in TO220F (SOT186A)Rev. 2 6 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit
Otros transistores... PSMN009-100B , PSMN009-100P , PSMN011-30YL , PSMN011-80YS , PSMN012-100YS , PSMN012-60YS , PSMN012-80PS , PSMN013-100BS , IRF730 , PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P .
History: FDB8442F085 | ZXMHC3A01T8 | SVT03100ND | WM05P02G | IRFI840A
History: FDB8442F085 | ZXMHC3A01T8 | SVT03100ND | WM05P02G | IRFI840A



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTQ90N02A | JMTQ60N04B | JMTQ440P04A | JMTQ4407A | JMTQ380C03D | JMTQ3400D | JMTQ320N10A | JMTQ3010D | JMTQ3008A | JMTQ3006C | JMTQ3006B | JMTQ3005C | JMTQ3005A | JMTQ3003A | JMTQ250C03D | JMTLA3134K
Popular searches
k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns