PSMN013-100ES. Аналоги и основные параметры

Наименование производителя: PSMN013-100ES

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 170 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0139 Ohm

Тип корпуса: I2PAK

Аналог (замена) для PSMN013-100ES

- подборⓘ MOSFET транзистора по параметрам

 

PSMN013-100ES даташит

 ..1. Size:213K  philips
 psmn013-100es.pdf pdf_icon

PSMN013-100ES

PSMN013-100ES N-channel 100 V 13.9 m standard level MOSFET in I2PAK Rev. 02 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 3.1. Size:170K  philips
 psmn013-100ps.pdf pdf_icon

PSMN013-100ES

PSMN013-100PS N-channel 100V 13.9m standard level MOSFET in TO220. Rev. 02 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc

 3.2. Size:283K  nxp
 psmn013-100yse.pdf pdf_icon

PSMN013-100ES

PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part of NXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot- swap" controllers - robust enough to withstand substantial inrush currents during turn on, whil

 3.3. Size:205K  nxp
 psmn013-100xs.pdf pdf_icon

PSMN013-100ES

PSMN013-100XS N-channel 100V 13 m standard level MOSFET in TO220F (SOT186A) Rev. 2 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefit

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... PSMN009-100B, PSMN009-100P, PSMN011-30YL, PSMN011-80YS, PSMN012-100YS, PSMN012-60YS, PSMN012-80PS, PSMN013-100BS, IRFB31N20D, PSMN013-100PS, PSMN013-30LL, PSMN013-30YLC, PSMN013-80YS, PSMN014-40YS, PSMN014-60LS, PSMN015-100B, PSMN015-100P