PSMN013-80YS Todos los transistores

 

PSMN013-80YS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN013-80YS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 106 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 37 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0129 Ohm
   Paquete / Cubierta: LFPAK
 

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PSMN013-80YS Datasheet (PDF)

 ..1. Size:221K  philips
psmn013-80ys.pdf pdf_icon

PSMN013-80YS

PSMN013-80YSN-channel LFPAK 80 V 12.9 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 ..2. Size:728K  nxp
psmn013-80ys.pdf pdf_icon

PSMN013-80YS

PSMN013-80YSN-channel LFPAK 80 V 12.9 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 6.1. Size:170K  philips
psmn013-100ps.pdf pdf_icon

PSMN013-80YS

PSMN013-100PSN-channel 100V 13.9m standard level MOSFET in TO220.Rev. 02 22 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 6.2. Size:399K  philips
psmn013-30ll.pdf pdf_icon

PSMN013-80YS

PSMN013-30LLN-channel QFN3333 30 V 13 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

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History: 2SK2018-01S | IPU80R1K0CE

 

 
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