PSMN013-80YS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN013-80YS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0129 Ohm
Encapsulados: LFPAK
Búsqueda de reemplazo de PSMN013-80YS MOSFET
- Selecciónⓘ de transistores por parámetros
PSMN013-80YS datasheet
psmn013-80ys.pdf
PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn013-80ys.pdf
PSMN013-80YS N-channel LFPAK 80 V 12.9 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn013-100ps.pdf
PSMN013-100PS N-channel 100V 13.9m standard level MOSFET in TO220. Rev. 02 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficienc
psmn013-30ll.pdf
PSMN013-30LL N-channel QFN3333 30 V 13 m logic level MOSFET Rev. 04 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due
Otros transistores... PSMN012-100YS, PSMN012-60YS, PSMN012-80PS, PSMN013-100BS, PSMN013-100ES, PSMN013-100PS, PSMN013-30LL, PSMN013-30YLC, IRFZ48N, PSMN014-40YS, PSMN014-60LS, PSMN015-100B, PSMN015-100P, PSMN015-110P, PSMN015-60PS, PSMN016-100PS, PSMN016-100XS
History: RAL035P01 | AP20N06D | SWF4N70L | DMN4060SVT-7 | SSM6J50TU
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2sb324 transistor | b754 transistor | 2sc828 equivalent | 4843ns | 2sc1318 datasheet | 2sc3281 datasheet | 2sa1106 | 2sb56
