PSMN013-80YS MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN013-80YS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 106 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 37 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0129 Ohm
Package: LFPAK
PSMN013-80YS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN013-80YS Datasheet (PDF)
1.1. psmn013-80ys.pdf 
Size:221K _philips2
PSMN013-80YS N-channel LFPAK 80 V 12.9 m? standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide
2.1. psmn013-100es.pdf Size:213K _philips2
PSMN013-100ES N-channel 100 V 13.9 m? standard level MOSFET in I2PAK Rev. 02 — 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low c
2.2. psmn013-100ps.pdf Size:170K _philips2
PSMN013-100PS N-channel 100V 13.9m? standard level MOSFET in TO220. Rev. 02 — 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t
2.3. psmn013-30ll.pdf Size:399K _philips2
PSMN013-30LL N-channel QFN3333 30 V 13 m? logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low
Datasheet: PSMN012-100YS , PSMN012-60YS , PSMN012-80PS , PSMN013-100BS , PSMN013-100ES , PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , 2SK163 , PSMN014-40YS , PSMN014-60LS , PSMN015-100B , PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS .
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