PSMN014-60LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN014-60LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: QFN3333
Búsqueda de reemplazo de PSMN014-60LS MOSFET
PSMN014-60LS Datasheet (PDF)
psmn014-40ys.pdf

PSMN014-40YSN-channel LFPAK 40 V, 14 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn014-40ys.pdf

PSMN014-40YSN-channel LFPAK 40 V, 14 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM
psmn014-80yl.pdf

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Otros transistores... PSMN012-80PS , PSMN013-100BS , PSMN013-100ES , PSMN013-100PS , PSMN013-30LL , PSMN013-30YLC , PSMN013-80YS , PSMN014-40YS , IRF1405 , PSMN015-100B , PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL .
History: BLP042N15J-B | H02N60F | SM2300NSA | BUK9840-55 | SFI9610 | 2SK2623 | 2SJ212
History: BLP042N15J-B | H02N60F | SM2300NSA | BUK9840-55 | SFI9610 | 2SK2623 | 2SJ212



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