Справочник MOSFET. PSMN014-60LS

 

PSMN014-60LS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN014-60LS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: QFN3333
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

PSMN014-60LS Datasheet (PDF)

 6.1. Size:218K  philips
 psmn014-40ys.pdf pdf_icon

PSMN014-60LS

PSMN014-40YSN-channel LFPAK 40 V, 14 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 6.2. Size:819K  nxp
 psmn014-40ys.pdf pdf_icon

PSMN014-60LS

PSMN014-40YSN-channel LFPAK 40 V, 14 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 6.3. Size:758K  nxp
 psmn014-80yl.pdf pdf_icon

PSMN014-60LS

PSMN014-80YLN-channel 80 V, 14 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

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