PSMN017-30LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN017-30LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: QFN3333
- Selección de transistores por parámetros
PSMN017-30LL Datasheet (PDF)
psmn017-30ll.pdf

PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn017-30pl.pdf

PSMN017-30PLN-channel 30 V 17 m logic level MOSFET in TO220Rev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
psmn017-30el.pdf

PSMN017-30ELN-channel 30 V 17 m logic level MOSFET in I2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
psmn017-30bl.pdf

PSMN017-30BLN-channel 30 V 17 m logic level MOSFET in D2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
Otros transistores... PSMN014-60LS , PSMN015-100B , PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , AO4468 , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS , PSMN020-100YS , PSMN022-30PL , PSMN023-80LS , PSMN025-100D , PSMN026-80YS .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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