PSMN017-30LL - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN017-30LL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: QFN3333
Аналог (замена) для PSMN017-30LL
PSMN017-30LL Datasheet (PDF)
psmn017-30ll.pdf

PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due
psmn017-30pl.pdf

PSMN017-30PLN-channel 30 V 17 m logic level MOSFET in TO220Rev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
psmn017-30el.pdf

PSMN017-30ELN-channel 30 V 17 m logic level MOSFET in I2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
psmn017-30bl.pdf

PSMN017-30BLN-channel 30 V 17 m logic level MOSFET in D2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t
Другие MOSFET... PSMN014-60LS , PSMN015-100B , PSMN015-100P , PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , STP65NF06 , PSMN017-60YS , PSMN017-80PS , PSMN018-80YS , PSMN020-100YS , PSMN022-30PL , PSMN023-80LS , PSMN025-100D , PSMN026-80YS .
History: DH025N08 | CEP6086L | BUK7M8R0-40E | HRLD1B8N10K | CEP6060L | RJK0213DPA | RJK0349DPA
History: DH025N08 | CEP6086L | BUK7M8R0-40E | HRLD1B8N10K | CEP6060L | RJK0213DPA | RJK0349DPA



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