PSMN030-150B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN030-150B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 55.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: D2PAK

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PSMN030-150B datasheet

 3.1. Size:180K  philips
 psmn030-150p.pdf pdf_icon

PSMN030-150B

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 3.2. Size:833K  nxp
 psmn030-150p.pdf pdf_icon

PSMN030-150B

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 6.1. Size:219K  philips
 psmn030-60ys.pdf pdf_icon

PSMN030-150B

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 6.2. Size:820K  nxp
 psmn030-60ys.pdf pdf_icon

PSMN030-150B

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

MOSTRAR MÁS

Otros transistores... PSMN018-80YS, PSMN020-100YS, PSMN022-30PL, PSMN023-80LS, PSMN025-100D, PSMN026-80YS, PSMN027-100PS, PSMN028-100YS, 20N60, PSMN030-150P, PSMN030-60YS, PSMN034-100PS, PSMN035-100LS, PSMN035-150B, PSMN035-150P, PSMN038-100K, PSMN039-100YS