PSMN030-150B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN030-150B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de PSMN030-150B MOSFET
PSMN030-150B Datasheet (PDF)
psmn030-150p.pdf

PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a
psmn030-150p.pdf

PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a
psmn030-60ys.pdf

PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn030-60ys.pdf

PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
Otros transistores... PSMN018-80YS , PSMN020-100YS , PSMN022-30PL , PSMN023-80LS , PSMN025-100D , PSMN026-80YS , PSMN027-100PS , PSMN028-100YS , IRF840 , PSMN030-150P , PSMN030-60YS , PSMN034-100PS , PSMN035-100LS , PSMN035-150B , PSMN035-150P , PSMN038-100K , PSMN039-100YS .
History: GSM3814W
History: GSM3814W



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
2sd427 | mje15032 equivalent | 2sc4834 | 2sd313 transistor equivalent | 2sc871 replacement | a872 transistor | b1560 | 2sa1695