PSMN030-150B. Аналоги и основные параметры

Наименование производителя: PSMN030-150B

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 55.5 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: D2PAK

Аналог (замена) для PSMN030-150B

- подборⓘ MOSFET транзистора по параметрам

 

PSMN030-150B даташит

 3.1. Size:180K  philips
 psmn030-150p.pdf pdf_icon

PSMN030-150B

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 3.2. Size:833K  nxp
 psmn030-150p.pdf pdf_icon

PSMN030-150B

PSMN030-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 6.1. Size:219K  philips
 psmn030-60ys.pdf pdf_icon

PSMN030-150B

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

 6.2. Size:820K  nxp
 psmn030-60ys.pdf pdf_icon

PSMN030-150B

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench

ПОКАЗАТЬ ЕЩЁ

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