PSMN030-150B Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN030-150B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 55.5 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: D2PAK
- подбор MOSFET транзистора по параметрам
PSMN030-150B Datasheet (PDF)
psmn030-150p.pdf
PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a
psmn030-150p.pdf
PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a
psmn030-60ys.pdf
PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn030-60ys.pdf
PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STM8358S | IPP60R099CP | NTD6415AN | BLF574 | SMG2329P | ASDM3080KQ | AP2610GY-HF
History: STM8358S | IPP60R099CP | NTD6415AN | BLF574 | SMG2329P | ASDM3080KQ | AP2610GY-HF
Список транзисторов
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MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
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