PSMN035-100LS Todos los transistores

 

PSMN035-100LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN035-100LS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: QFN3333

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PSMN035-100LS Datasheet (PDF)

 ..1. Size:387K  philips
psmn035-100ls.pdf

PSMN035-100LS
PSMN035-100LS

PSMN035-100LSN-channel QFN3333 100 V 32m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic

 5.1. Size:152K  philips
psmn035-150 series hg 3.pdf

PSMN035-100LS
PSMN035-100LS

DISCRETE SEMICONDUCTORSDATA SHEETPSMN035-150B; PSMN035-150PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

 5.2. Size:895K  cn vbsemi
psmn035-150.pdf

PSMN035-100LS
PSMN035-100LS

PSMN035-150www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

 7.1. Size:297K  philips
psmn035 150 series.pdf

PSMN035-100LS
PSMN035-100LS

PSMN035-150B;PSMN035-150PN-channel enhancement mode field-effect transistorRev. 04 22 February 2001 Product specification1. DescriptionSiliconMAX1 products use the latest TrenchMOS2 technology to achieve thelowest possible on-state resistance for each package.Product availability:PSMN035-150P in SOT78 (TO-220AB)PSMN035-150B in SOT404 (D2-PAK).2. Features Fast swi

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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