PSMN035-100LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN035-100LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: QFN3333
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PSMN035-100LS Datasheet (PDF)
psmn035-100ls.pdf
PSMN035-100LSN-channel QFN3333 100 V 32m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic
psmn035-150 series hg 3.pdf
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psmn035-150.pdf
PSMN035-150www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n
psmn035 150 series.pdf
PSMN035-150B;PSMN035-150PN-channel enhancement mode field-effect transistorRev. 04 22 February 2001 Product specification1. DescriptionSiliconMAX1 products use the latest TrenchMOS2 technology to achieve thelowest possible on-state resistance for each package.Product availability:PSMN035-150P in SOT78 (TO-220AB)PSMN035-150B in SOT404 (D2-PAK).2. Features Fast swi
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